INFLUENCE OF QUANTUM DOT SIZE ON THE CHARACTERISTICS OF FIELD EFFECT TRANSISTORS
Abstract
A quantum dot (QD) with discrete energy levels connected to source and drain connections that display continuous energy distributions can be used to represent the channel in nanoscale field effect transistors (FETs). Contact states also permeate the channel region, and the initially sharp discrete states in the channel expand and "spill over" into the contacts as a result of this coupling.The result is a broadened density of states (DOS) in the channel that obeys a sum rule preserving electron count. This broadened DOS is commonly described by a Lorentzian function . This paper investigates how varying the size of cubic quantum dots affects the DOS and subsequent FET characteristics.
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