MOLECULAR BEAM EPITAXY

Yusupov Abdurashid Khamidillaevich; Inomov Bekzodbek

MOLECULAR BEAM EPITAXY

Авторы

Yusupov Abdurashid Khamidillaevich Автор
Inomov Bekzodbek Автор

Ключевые слова:

Keywords: Molecular Beam Epitaxy (MBE), ultra-high vacuum, semiconductor heterostructures, thin-film growth, atomic layer control, RHEED, quantum wells, quantum dots, III–V compounds, wide bandgap materials, nanotechnology, optoelectronic devices, crystal growth, surface analysis, epitaxial layers.

Аннотация

Abstract. Molecular Beam Epitaxy (MBE) is a highly precise thin-film deposition technique used for the growth of single-crystal semiconductor layers under ultra-high vacuum conditions. By enabling atomic-scale control over composition and thickness, MBE has become an indispensable tool in the fabrication of advanced electronic and optoelectronic devices, including high-speed transistors, quantum wells, quantum dots, superlattices, and laser diodes.