MOLECULAR BEAM EPITAXY

Yusupov Abdurashid Khamidillaevich; Inomov Bekzodbek

MOLECULAR BEAM EPITAXY

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Yusupov Abdurashid Khamidillaevich ##default.groups.name.author##
Inomov Bekzodbek ##default.groups.name.author##

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Keywords: Molecular Beam Epitaxy (MBE), ultra-high vacuum, semiconductor heterostructures, thin-film growth, atomic layer control, RHEED, quantum wells, quantum dots, III–V compounds, wide bandgap materials, nanotechnology, optoelectronic devices, crystal growth, surface analysis, epitaxial layers.

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Abstract. Molecular Beam Epitaxy (MBE) is a highly precise thin-film deposition technique used for the growth of single-crystal semiconductor layers under ultra-high vacuum conditions. By enabling atomic-scale control over composition and thickness, MBE has become an indispensable tool in the fabrication of advanced electronic and optoelectronic devices, including high-speed transistors, quantum wells, quantum dots, superlattices, and laser diodes.